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TrenchStop series ^
IKB06N60T IKP06N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
* * * *
*
* * *
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s G Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : P-TO-220-3-1 (TO-220AB) - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Low EMI Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC;Tc=100C 6A 6A VCE(sat),Tj=25C 1.5V 1.5V Tj,max 175C 175C
E
P-TO-263-3-2 (D-PAK) (TO-263AB)
Type IKP06N60T IKB06N60T
Marking Code Package K06T60 K06T60 TO-220-3-1 TO-263-3-2
Ordering Code Q67040S4679 Q67040S4680
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 175C Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Tj Tstg -40...+175 -55...+175 C
1)
Symbol VCE IC
Value 600 12 6
Unit V A
ICpuls IF
18 18
12 6 IFpuls VGE tSC Ptot 18 20 5 88 V s W
VGE = 15V, VCC 400V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Oct-04
Power Semiconductors
TrenchStop series ^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Thermal resistance, junction - ambient RthJA TO263-3-2 Footprint TO263-3-2 (6cm Cu) RthJA TO220-3-1 RthJCD TO220-3-1 RthJC TO220-3-1 Symbol Conditions
IKB06N60T IKP06N60T
Max. Value 1.7 2.6 62 65 40 Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 25 mA VCE(sat) V G E = 15V, I C = 6A T j = 25 C T j = 17 5 C Diode forward voltage VF V G E = 0V, I F = 6A T j = 25 C T j = 17 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 18 mA, VCE=VGE V C E = 600V , V G E = 0V T j = 25 C T j = 17 5 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 6A 3.6 none 40 700 100 nA S A 4.1 1.6 1.6 4.6 2.05 5.7 1.5 1.8 2.05 600 V Symbol Conditions Value min. typ. max. Unit
Power Semiconductors
2
Rev. 2 Oct-04
TrenchStop series ^ Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
IKB06N60T IKP06N60T
368 28 11 42 7 55 nC nH A pF
Ciss Coss Crss QGate LE IC(SC)
V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 6A V G E = 1 5V T O - 2 20-3- 1 T O - 2 63-3- 2 V G E = 1 5V,t S C 5s V C C = 400V, T j = 25 C
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 25 C, V R = 4 00V, I F = 6A, di F / dt = 55 0A / s 123 190 5.3 450 ns nC A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , R G = 2 3 , 2) L = 6 0nH , C 2 ) =40pF Energy losses include "tail" and diode reverse recovery. 9 6 130 58 0.09 0.11 0.2 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2 Oct-04
Power Semiconductors
TrenchStop series ^ Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 17 5 C V R = 4 00V, I F = 6A, di F / dt = 55 0A / s td(on) tr td(off) tf Eon Eoff Ets T j = 17 5 C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , R G = 23 L 1 ) = 6 0nH , C 1 ) =40pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKB06N60T IKP06N60T
Value min. typ. 9 8 165 84 0.14 0.18 0.335 180 500 7.6 285 max. ns nC A A/s mJ Unit
ns
1)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2 Oct-04
Power Semiconductors
TrenchStop series ^
IKB06N60T IKP06N60T
tp=1s 5s 10s
18A 15A T C =80C 12A 9A 6A 3A 0A 100H z T C =110C
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
1A
50s
Ic
500s 5ms DC 0,1A 1V
Ic
1kH z 10kHz 100kH z
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
80W
15A
60W
IC, COLLECTOR CURRENT
POWER DISSIPATION
10A
40W
Ptot,
5A
20W
0W 25C
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
5
Rev. 2 Oct-04
TrenchStop series ^
IKB06N60T IKP06N60T
15A V GE =20V
15A V GE =20V
IC, COLLECTOR CURRENT
12A
15V 13V
IC, COLLECTOR CURRENT
12A
15V 13V
9A
11V 9V
9A
11V 9V
6A
7V
6A
7V
3A
3A
0A 0V 1V 2V 3V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC =12A 2,5V
15A
IC, COLLECTOR CURRENT
12A
2,0V
IC =6A
9A
1,5V
6A T J = 1 7 5 C 2 5 C 0A
1,0V
IC =3A
3A
0,5V
0V
2V
4V
6V
8V
10V
0,0V -50C
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2 Oct-04
TrenchStop series ^
t d(off)
IKB06N60T IKP06N60T
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
100ns tf td(on) tr
10ns
t d(on)
10ns
tr 1ns 0A 3A 6A 9A 12A 15A
1ns
10
30
50
70
90
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
100ns t d(off) tf
6V 5V 4V 3V m in. 2V 1V 0V -50C m ax.
t, SWITCHING TIMES
typ.
10ns
td(on)
tr
1ns
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA)
Power Semiconductors
7
Rev. 2 Oct-04
TrenchStop series ^
*) E on and E ts include losses 0,6 mJ due to diode recovery E ts*
IKB06N60T IKP06N60T
*) E on and E ts include losses due to diode recovery E ts*
E, SWITCHING ENERGY LOSSES
0,5 mJ 0,4 mJ 0,3 mJ 0,2 mJ 0,1 mJ 0,0 mJ 0A
E, SWITCHING ENERGY LOSSES
0,4 mJ
0,3 mJ
E on*
E off E on*
0,2 mJ
E off
0,1 mJ
2A
4A
6A
8A
10A
0,0 mJ
10
30
55
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=400V, VGE=0/15V, RG=23, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
*) E on and E ts include losses due to diode recovery 0,4mJ
0,5m J
*) E on and E ts include losses due to diode recovery E ts * 0,4m J
E, SWITCHING ENERGY LOSSES
0,3mJ E ts* 0,2mJ E off 0,1mJ E on* 0,0mJ 50C 100C 150C
E, SWITCHING ENERGY LOSSES
0,3m J
E off
0,2m J E on * 0,1m J
0,0m J 200V
300V
400V
500V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 6A, RG = 23, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2 Oct-04
TrenchStop series ^
IKB06N60T IKP06N60T
1nF
VGE, GATE-EMITTER VOLTAGE
15V
C iss
120V 10V 480V
c, CAPACITANCE
100pF
C oss C rss 10pF
5V
0V 0nC
10nC
20nC
30nC
40nC
50nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
80A
SHORT CIRCUIT WITHSTAND TIME
10s 8s 6s 4s 2s 0s 10V
60A
40A
tSC,
20A
0A 12V
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
9
Rev. 2 Oct-04
TrenchStop series ^
IKB06N60T IKP06N60T
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5
0
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W 0.2 0.1 0.05 10 K/W 0.02 0.01
C1= 1/R1 C2= 2/R2
-1
0
0.2 0.1 10 K/W
-1
0.05
R,(K/W) 0.3837 0.4533 0.5877 0.2483
R1
, (s) -2 5.047*10 -3 4.758*10 -4 4.965*10 -5 4.717*10
R2
R,(K/W) 0.2520 0.4578 1.054 0.7822
R1
, (s) -2 4.849*10 -2 1.014*10 -3 1.309*10 -4 1.343*10
R2
0.02 0.01 single pulse
C1= 1/R1
C2=2/R2
single pulse
10 K/W 1s
-2
10s 100s
1ms
10ms 100ms
10 K/W 1s
-2
10s 100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
250ns
0,5C
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
T J =175C
0,4C
200ns
150ns
TJ=175C
0,3C
100ns
0,2C
TJ=25C
50ns
T J=25C
0,1C
0ns 200A/s
400A/s
600A/s
800A/s
0,0C 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=400V, IF=6 A, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2 Oct-04
TrenchStop series ^
IKB06N60T IKP06N60T
T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
8A
-500A/s
T J=25C
-400A/s
6A
T J =25C
-300A/s
4A
T J=175C
-200A/s
2A
Irr,
-100A/s
0A
200A/s
400A/s
600A/s
800A/s
0A/s 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
10A
2,0V I F =12A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
8A
6A 1,5V 3A 1,0V
6A
4A T J =175C 2A 25C
0,5V
0A
0,0V
0V
1V
2V
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
11
Rev. 2 Oct-04
TrenchStop series ^
TO-220AB
symbol
min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
IKB06N60T IKP06N60T
dimensions
[mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
min A B C D E F G H K L M N P Q R S T U V W X Y Z 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 [mm]
dimensions
[inch] max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 min 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157 max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236
2.54 typ. 5.08 typ.
0.1 typ. 0.2 typ.
15 typ.
0.5906 typ.
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
12
Rev. 2 Oct-04
TrenchStop series ^
i,v diF /dt
IKB06N60T IKP06N60T
tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH and Stray capacity C =40pF.
Power Semiconductors
13
Rev. 2 Oct-04
TrenchStop series ^
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please!
IKB06N60T IKP06N60T
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2 Oct-04

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